Real-time measurement of Si wafer thickness at CMP or BG
Non contact, non destructive measurement
Parameter setting after spectrum analysis
High speed real-time monitoring during CMP, BG
Measurement over interlayer such as protection film and window material
Multi layers analysis
Original analytical engine (Patent pending)
Original analytical algorism for thickness measurement (Patented)
Automatic mapping function for thickness distribution
Film thickness analysis (5 layers)
Thickness measurement for Si wafer material
Grinding evaluation for silicon/ compound semiconductor
1.3mm/ next generation 450mm wafer
775㎛ 300mm wafer
TSV wafer (Si layer thickness measurement on via)
Other materials (SiO2, film)
Non contact, non destructive measurement
Parameter setting after spectrum analysis
High speed real-time monitoring during CMP, BG
Measurement over interlayer such as protection film and window material
Multi layers analysis
Original analytical engine (Patent pending)
Original analytical algorism for thickness measurement (Patented)
Automatic mapping function for thickness distribution
Film thickness analysis (5 layers)
Thickness measurement for Si wafer material
Grinding evaluation for silicon/ compound semiconductor
1.3mm/ next generation 450mm wafer
775㎛ 300mm wafer
TSV wafer (Si layer thickness measurement on via)
Other materials (SiO2, film)
| Model | SF-3/200 | SF-3/300 | SF-3/1300 |
| Silicon Measurement Thickness Range | 6~400μm | 10~775μm | 50~1300μm |
| Resin Measurement Thickness Range | 10~1000μm | 20~1500μm | 100~2600μm |
| Minimum Sampling Period | 5kHz(200μsec) | ||
| Repeatability | less than ±0.01%＊1 | ||
| Measurement Size | Over about Φ20μm＊2 | ||
| Measurement Distance | 50mm,80mm,120mm,150mm,200mm | ||
| Light source | Semiconductor light source (laser class 3B product) | ||
| Analysis Method | FFT analysis, optimization method＊3 | ||
| Interface | LAN, I/O input/output terminal | ||
| Power supply | DC 24 V specification, (AC power supply unit sold separately) | ||
| Size | W123×D224×H128mm | ||
| Optional Item | 123（W）×224（D)×128（H）mm | ||
＊1:The standard relative deviation of our standard sample AirGap
(approximately 300 μm and about 1000 μm) at time of measurement (n=20).
＊2:Design value at time of WD 50 mm probe specification
＊3:Used when measuring thinned wafers
＊CE acquired products are SF-3/300, SF-3/1300
